Defect structures in (001) zincblende GaN/3C-SiC nucleation layers

Identification and carrier dynamics of the dominant lifetime limiting defect in n 4H-SiC epitaxial layers

Nucleation and growth of supported clusters at defect sites: PdÕMgO„001..

Nucleation and growth of Pd on cleaved MgO~001! surfaces were studied by variable-temperature atomic force microscopy in the temperature range 200–800 K. Constant island densities (;3310 cm) were observed over a wide temperature range, indicating nucleation kinetics governed by point defects with a high trapping energy. These results are compared to a rate equation model that describes the prin...

Adsorption processes of hydrogen molecules on SiC(001), Si(001) and C(001) surfaces

Adsorption processes of hydrogen molecules on the Si(001)-(2× 1) and C(001)-(2× 1) surfaces are discussed in light of our previous studies of H2 adsorption on the related SiC(001)-c(4× 2) surface. Very amazingly, there are pathways above the latter on which hydrogen molecules can adsorb dissociatively at room temperature. One of these pathways has not been considered before for adsorption of H2...

Nucleation and growth of polycrystalline SiC

The nucleation and bulk growth of polycrystalline SiC in a 2 inch PVT setup using isostatic and pyrolytic graphite as substrates was studied. Textured nucleation occurs under near-thermal equilibrium conditions at the initial growth stage with hexagonal platelet shaped crystallites of 4H, 6H and 15R polytypes. It is found that pyrolytic graphite results in enhanced texturing of the nucleating g...

Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures.

Suspended crystalline Ge semiconductor structures are created on a Si(001) substrate by a combination of epitaxial growth and simple patterning from the front surface using anisotropic underetching. Geometric definition of the surface Ge layer gives access to a range of crystalline planes that have different etch resistance. The structures are aligned to avoid etch-resistive planes in making th...